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AON4602 Complementary Enhancement Mode Field Effect Transistor
General Description
The AON4602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4602 is Pb-free (meets ROHS & Sony 259 specifications). AON4602L is a Green Product ordering option. AON4602 and AON4602L are electrically identical.
Features n-channel
VDS (V) = 20V ID = 4.2A
p-channel
-20V -3.4A (VGS= 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V)
D2
RDS(ON)< 50m < 90m RDS(ON) < 63m < 120m RDS(ON) < 87m < 160m
D1
S1 G1 S2 G2
1 2 3 4
8 7 6 5
D1 D1 D2 D2
G1 S1
G2 S2
DFN3X2
n-channel
p-channel Units V V A
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 20 VGS Gate-Source Voltage 8 Continuous Drain TA=25C 4.2 Current A 3.2 ID TA=70C Pulsed Drain Current
B
Max p-channel -20 8 -3.4 -2.7 -15 1.7 1.1 -55 to 150
IDM PD TJ, TSTG
TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
15 1.4 0.9 -55 to 150
W C
Symbol t 10s Steady-State Steady-State RJA RJL Symbol t 10s Steady-State Steady-State RJA RJL
Typ 70 100 63 Typ 49 81 37
Max 90 125 80 Max 75 100 45
Units C/W C/W C/W Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AON4602
n-channel Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=4.2A TJ=125C 0.4 15 0.7 41 58 52 67 11 0.8 Min 20 1 5 100 1 50 70 63 87 1 2 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
VGS=2.5V, ID=3.7A VGS=1.8V, ID=3.2A Forward Transconductance VDS=5V, ID=4.2A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
436 66 44 3 6.2 1.6 0.5 5.5 6.3 40 12.7 12.3 3.5
VGS=4.5V, VDS=10V, ID=4.2A
VGS=5V, VDS=10V, RL=2.7, RGEN=6 IF=4A, dI/dt=100A/s IF=4A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0 : Jan. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON4602
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16 8V 10 4.5V 8 2V ID(A) 3V 2.5V 6 4 4 VGS=1.5V 2 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 100 Normalized On-Resistance 1.8 VGS=2.5 1.6 1.4 1.2 1 0.8 0 4 8 12 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25 125C IS (A) ID=4.2A 1E-01 1E-02 25C 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1E+01 1E+00 125C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=1.8 ID=4.2A VGS=4.5V VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 0 VDS=5V
12
ID (A)
8
80 RDS(ON) (m)
VGS=1.8V
60
VGS=2.5V
40
VGS=4.5V
20
Alpha & Omega Semiconductor, Ltd.
AON4602
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=4.2A 800
Capacitance (pF)
600
Ciss
400
200
Coss
Crss
0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C 10.0 RDS(ON) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 100s
20
TJ(Max)=150C TA=25C
15 1ms Power (W) 10s
ID (Amps)
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
PD Ton
T
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AON4602
p-channel MOSFET Electrical Characteristics (T=25C unless otherwise noted) J Symbol STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.4A TJ=125C VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-1.5A gFS VSD IS Ciss Coss Crss Rg Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-3.4A IS=-1A,VGS=0V 4 -0.3 -15 -0.63 73 102 95 123 7 -0.83 -20 -1 -5 100 -1 90 125 120 160 -1 -2 540 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 72 49 12 V A nA V A m m m S V A pF pF pF Parameter Conditions Min Typ Max Units
RDS(ON)
Static Drain-Source On-Resistance
Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance
DYNAMIC PARAMETERS
SWITCHING PARAMETERS Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=-3.8A, dI/dt=100A/s VGS=-4.5V, VDS=-10V, RL=2.6, RGEN=3 VGS=-4.5V, VDS=-10V, ID=-3.8A 6.1 0.6 1.6 10 12 44 22 21 7.5 nC nC nC ns ns ns ns ns nC
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0. Jan. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2
Alpha & Omega Semiconductor, Ltd.
AON4602
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 -2.5V 6 VDS=-5V
5 VGS=-1.5V
2
125C
25C 0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0
165
1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics
0.5
2
160 150 140 130 RDS(ON) (m) 120 110 100 90 80 70 60 50 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 VGS=-4.5V VGS=-2.5V VGS=-1.8V Normalized On-Resistance
1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=-3.4A VGS=-1.8V ID=-1.5A VGS=-4.5V ID=-3.4A VGS=-2.5V ID=-2.5A
RDS(ON) (m)
150 -IS (A)
1E-01 1E-02 1E-03 1E-04 1E-05
125C 25C
125C 100 25C
50 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AON4602
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-3.4A Capacitance (pF) 800
600
Ciss
400
200
Crss Coss
165
20
0 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 0.1s 1.0 1s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100s 10s 1ms 10ms Power (W)
20
TJ(Max)=150C TA=25C
15
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK =TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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